Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/83211
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Type: Journal article
Title: Use of whispering-gallery modes and quasi TE₀np modes for broadband characterization of bulk gallium arsenide and gallium phosphide samples
Other Titles: Use of whispering-gallery modes and quasi TE0np modes for broadband characterization of bulk gallium arsenide and gallium phosphide samples
Author: Krupka, J.
Mouneyrac, D.
Hartnett, J.
Tobar, M.
Citation: IEEE Transactions on Microwave Theory and Techniques, 2008; 56(5):1201-1206
Publisher: IEEE-Inst Electrical Electronics Engineers Inc
Issue Date: 2008
ISSN: 0018-9480
1557-9670
Statement of
Responsibility: 
Jerzy Krupka, David Mouneyrac, John G. Hartnett, and Michael E. Tobar
Abstract: The complex permittivity of bulk crystals of semiinsulating gallium arsenide (GaAs) and gallium phosphide (GaP) were measured over the frequency range from 4 to 30 GHz and at temperatures from 30 up to 300 K employing whispering-gallery-mode (WGM) and quasi-TE0 np-mode dielectric-resonator techniques. At temperatures about 40 K, dielectric loss tangent values were below 10 -6 for GaAs and below 10 -5 for GaP. The use of several WGMs, as well as TE0 np modes excited in the same test sample enabled a broad frequency range of measurements (one decade). The real part of the permittivity of GaP and GaAs proved to be frequency independent at microwave frequencies. The dielectric loss tangents of GaAs and GaP increase with temperature and frequency.
Rights: © 2008 IEEE
DOI: 10.1109/TMTT.2008.921652
Published version: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4488211
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Chemistry and Physics publications

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