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https://hdl.handle.net/2440/83211
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Type: | Journal article |
Title: | Use of whispering-gallery modes and quasi TE₀np modes for broadband characterization of bulk gallium arsenide and gallium phosphide samples |
Other Titles: | Use of whispering-gallery modes and quasi TE0np modes for broadband characterization of bulk gallium arsenide and gallium phosphide samples |
Author: | Krupka, J. Mouneyrac, D. Hartnett, J. Tobar, M. |
Citation: | IEEE Transactions on Microwave Theory and Techniques, 2008; 56(5):1201-1206 |
Publisher: | IEEE-Inst Electrical Electronics Engineers Inc |
Issue Date: | 2008 |
ISSN: | 0018-9480 1557-9670 |
Statement of Responsibility: | Jerzy Krupka, David Mouneyrac, John G. Hartnett, and Michael E. Tobar |
Abstract: | The complex permittivity of bulk crystals of semiinsulating gallium arsenide (GaAs) and gallium phosphide (GaP) were measured over the frequency range from 4 to 30 GHz and at temperatures from 30 up to 300 K employing whispering-gallery-mode (WGM) and quasi-TE0 np-mode dielectric-resonator techniques. At temperatures about 40 K, dielectric loss tangent values were below 10 -6 for GaAs and below 10 -5 for GaP. The use of several WGMs, as well as TE0 np modes excited in the same test sample enabled a broad frequency range of measurements (one decade). The real part of the permittivity of GaP and GaAs proved to be frequency independent at microwave frequencies. The dielectric loss tangents of GaAs and GaP increase with temperature and frequency. |
Rights: | © 2008 IEEE |
DOI: | 10.1109/TMTT.2008.921652 |
Published version: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4488211 |
Appears in Collections: | Aurora harvest Chemistry and Physics publications |
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