Please use this identifier to cite or link to this item:
https://hdl.handle.net/2440/66014
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Type: | Journal article |
Title: | Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane |
Author: | Vaccaro, S. |
Citation: | Journal of Chemical Physics, 2011; 135(9):095102-1-095102-9 |
Publisher: | Amer Inst Physics |
Issue Date: | 2011 |
ISSN: | 0021-9606 1089-7690 |
Statement of Responsibility: | S. R. Vaccaro |
Abstract: | The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski equation provides a good fit to the voltage dependence of the slowest time constant of the ionic current in a depolarized membrane, and the gating current exhibits a rising phase that precedes an exponential relaxation. For each depolarizing potential, the calculated time dependence of the survival probabilities of the closed states of an alpha helical S4 sensor are in accord with an empirical model of the ionic and gating currents recorded during the activation process. |
Keywords: | Voltage dependence of K channel activation Smoluchowski equation S4 sensor Brownian motion |
Description: | Published online 6 September 2011 |
Rights: | © 2011 American Institute of Physics |
DOI: | 10.1063/1.3630010 |
Published version: | http://dx.doi.org/10.1063/1.3630010 |
Appears in Collections: | Aurora harvest 5 Chemistry and Physics publications |
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hdl_66014.pdf | Published version | 341.08 kB | Adobe PDF | View/Open |
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