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|Title:||GaAs MESFET Photodetectors for imaging arrays / by Derek Abbott.|
|School/Discipline:||Dept. of Electrical and Electronic Engineering|
|Abstract:||The main objective of this thesis is to create a significant advance in the area of solid-state imaging via the research of an image sensor that can be ultimately integrated with high-speed gallium arsenide (GaAs) processing circuitry on a common substrate chip.|
|Dissertation Note:||Thesis (Ph.D.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1997|
|Subject:||Gallium arsenide semiconductors.|
Metal semiconductor field-effect transistors.
|Description:||Bibliography: p. 269-276.|
xxx, 306 p. : ill. ; 30 cm.
|Provenance:||This electronic version is made publicly available by the University of Adelaide in accordance with its open access policy for student theses. Copyright in this thesis remains with the author. This thesis may incorporate third party material which has been used by the author pursuant to Fair Dealing exception. If you are the author of this thesis and do not wish it to be made publicly available or If you are the owner of any included third party copyright material you wish to be removed from this electronic version, please complete the take down form located at: http://www.adelaide.edu.au/legals|
|Appears in Collections:||Research Theses|
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|01front.pdf||93.29 kB||Adobe PDF||View/Open|
|02whole.pdf||15.91 MB||Adobe PDF||View/Open|
|Library staff access only||195.63 kB||Adobe PDF||View/Open|
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