Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/132196
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Type: Journal article
Title: An adaptive markov random field for structured compressive sensing
Author: Suwanwimolkul, S.
Zhang, L.
Gong, D.
Zhang, Z.
Chen, C.
Ranasinghe, D.C.
Qinfeng Shi, J.
Citation: IEEE Transactions on Image Processing, 2019; 28(3):1556-1570
Publisher: IEEE
Issue Date: 2019
ISSN: 1057-7149
1941-0042
Statement of
Responsibility: 
Suwichaya Suwanwimolkul, Lei Zhang, Dong Gong, Zhen Zhang, Chao Chen, Damith C. Ranasinghe and Javen Qinfeng Shi
Abstract: Exploiting intrinsic structures in sparse signals underpin the recent progress in compressive sensing (CS). The key for exploiting such structures is to achieve two desirable properties: generality (i.e., the ability to fit a wide range of signals with diverse structures) and adaptability (i.e., being adaptive to a specific signal). Most existing approaches, however, often only achieve one of these two properties. In this paper, we propose a novel adaptive Markov random field sparsity prior for CS, which not only is able to capture a broad range of sparsity structures, but also can adapt to each sparse signal through refining the parameters of the sparsity prior with respect to the compressed measurements. To maximize the adaptability, we also propose a new sparse signal estimation, where the sparse signals, support, noise, and signal parameter estimation are unified into a variational optimization problem, which can be effectively solved with an alternative minimization scheme. Extensive experiments on three real-world datasets demonstrate the effectiveness of the proposed method in recovery accuracy, noise tolerance, and runtime.
Keywords: Structured compressive sensing, probabilistic graphical models, sparse representation
Rights: © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
DOI: 10.1109/TIP.2018.2878294
Grant ID: http://purl.org/au-research/grants/arc/DP160100703
Published version: http://dx.doi.org/10.1109/tip.2018.2878294
Appears in Collections:Electrical and Electronic Engineering publications

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